Motorola M14035 NPN silicon RF power transistor. (NOS)

Motorola M14035 NPN silicon RF power transistor. This part is now considered obsolete, but it was designed for use in power amplifier applications in the RF (radio frequency) range.

​Key Specifications

​Based on information from various datasheets and electronics archives, the typical specifications for the M14035 transistor are:

​Type: NPN Silicon RF Power Transistor

​Case Style: Flange Mount (like the one shown in your photo)

​Max Collector-Emitter Voltage (V_{CEO}): 18V

​Max Collector-Base Voltage (V_{CBO}): 36V

​Max Emitter-Base Voltage (V_{EBO}): 4.0V

​Max Collector Current (I_C): 4.0 A

​Power Dissipation (P_D): 65 W (at a case temperature of 25^{\circ}C)

​It's important to note that the exact performance characteristics, such as gain and output power, would depend on the specific frequency and application circuit.