2N4932 is a PNP bipolar junction transistor (BJT) (NOS)

The 2N4932 is a PNP bipolar junction transistor (BJT) that is generally considered a general-purpose, high-voltage component. It is a silicon transistor that's often found in older designs and military-spec applications, similar to the 2N2905A.

Here's a breakdown of its key characteristics:

Key Specifications and Characteristics

 * Polarity: PNP

 * Collector-Emitter Voltage (V_{CEO}): -200 V

 * Collector Current (I_C): -200 mA (continuous)

 * Package: TO-39 (hermetically sealed metal can, through-hole)

 * DC Current Gain (h_{FE}): The gain can vary, but datasheets show a range.

 * Transition Frequency (f_T): Datasheets indicate a transition frequency of up to 450 MHz, making it suitable for high-frequency applications.

Common Applications

The 2N4932's high-voltage and high-frequency capabilities make it suitable for:

 * High-voltage switching circuits: Its 200V rating allows it to be used in circuits with higher voltages than many other general-purpose transistors.

 * RF amplifiers and oscillators: Its high transition frequency makes it a good choice for radio-frequency applications.

 * General-purpose amplification: Can be used in a variety of low-power to medium-power amplifier circuits.