MTP1N100E high-voltage N-channel power MOSFET (NOS)

The MTP1N100E is a high-voltage N-channel power MOSFET designed for demanding switching applications. With a drain-source voltage rating of 1000 V and a continuous drain current of 1 A, it delivers reliable performance under stress. Its maximum on-resistance of 9.0 Ω supports efficient power handling, while the TO-220AB package ensures ease of mounting and heat dissipation. Ideal for expert use in circuits requiring robust, high-speed switching and durable power management.