BFY90 silicon NPN bipolar junction transistor (BJT) (NOS GOLD LEADS)

The BFY90 is a silicon NPN bipolar junction transistor (BJT) that is specifically designed for very high-frequency (VHF) and ultra-high-frequency (UHF) applications. It is known for its use in wide-band amplifiers, oscillators, and mixers up to 1 GHz. A key feature of the BFY90 is its low noise performance, which is critical for RF signal processing. The transistor is typically housed in a hermetic TO-72 metal case.

Here are some of its key specifications:

• Transistor Type: NPN

• Collector-Emitter Voltage (VCEO): 15 V

• Collector-Base Voltage (VCBO): 30 V

• Continuous Collector Current (IC): 25 mA

• Power Dissipation (PD): 200 mW (at TA=25∘C)

• Transition Frequency (fT): 1.0 GHz (min)

• Noise Figure (NF): 5.0 dB (max at 500 MHz)