2N930 precision NPN silicon bipolar junction transistor (NOS GOLD LEADS)

The 2N930 is a precision NPN silicon bipolar junction transistor optimized for low-level, low-noise amplifier applications. Packaged in a hermetic TO-18 metal can, it offers reliable performance with a collector-emitter voltage rating of 45 V and a continuous collector current of 30 mA. With a power dissipation of 300 mW and a transition frequency of 150 MHz, the 2N930 ensures efficient high-frequency operation. Its DC current gain ranges from 100 to 300 at low bias conditions, making it ideal for sensitive signal amplification where low noise and stability are critical.