2N918 silicon NPN bipolar junction transistor

The 2N918 is a silicon NPN bipolar junction transistor optimized for high-frequency performance up to 600 MHz. Housed in a durable TO-72 metal-can package, it supports collector-emitter voltages up to 15 V, collector currents of 50 mA, and power dissipation of 300 mW at 25°C. With a minimum DC current gain of 20, it excels in low-noise amplification and switching tasks. This transistor is ideally suited for use in VHF/UHF amplifiers, RF oscillators, mixers, and FM receiver front-end circuits requiring reliable, high-frequency signal processing.