2N6659 is an N-channel enhancement-mode MOSFET (NOS)

The 2N6659 is an N-channel enhancement-mode MOSFET optimized for fast switching and amplification in electronic circuits. Originally manufactured by Motorola and Vishay/Siliconix, it supports a maximum drain-source voltage of 35V and handles continuous drain currents up to 1.4A. Its low on-resistance enhances efficiency, making it ideal for precision switching applications requiring reliable performance under moderate voltage and current conditions. This component is a fundamental choice for experts requiring robust and responsive MOSFETs in control and power management circuits.