2N6300 is a high-voltage, high-power NPN silicon transistor (NOS)

The 2N6300 is a high-voltage, high-power NPN silicon transistor, perfect for switching and linear applications. With a TO-3 metal can package and optimal heat dissipation capabilities, it can safely handle up to 250V (V_{CEO}) and 125W (P_{D}). Manufactured by CDIL, a leader in power semiconductors, this transistor ensures reliable and efficient performance.

Identification

• ​Part Number: 2N6300
• ​Manufacturer: The "C G G" logo on the part indicates it was manufactured by Continental Device India Ltd. (CDIL), which is known for producing power semiconductors.
• ​Description: This is a high-voltage, high-power NPN silicon transistor. It's often used in switching and linear applications.

​Key Specifications

• ​Transistor Type: NPN
• ​Package Type: TO-3 metal can. This is a common package for power components due to its excellent heat dissipation capabilities.
• ​Collector-Emitter Voltage (V_{CEO}): Up to 250V (maximum)
• ​Collector-Base Voltage (V_{CBO}): Up to 300V (maximum)
• ​Emitter-Base Voltage (V_{EBO}): Up to 6V (maximum)
• ​Collector Current (I_{C}): Up to 8A (maximum)
• ​Power Dissipation (P_{D}): Up to 125W (at a case temperature of 25°C)