2N6006 silicon NPN bipolar junction transistor (MIL/SPEC - NOS - gold case)

The 2N6006 is a silicon NPN bipolar junction transistor designed for high-voltage, high-power applications. It features a maximum collector-emitter voltage of 120 V and a collector-base voltage of 140 V, supporting continuous collector currents up to 5 A. With power dissipation rated at 35 W at 25°C case temperature, the 2N6006 ensures reliable performance in demanding environments. Its TO-66 metal can package offers superior thermal management and durability, making it suitable for robust electronic designs requiring stable and efficient switching or amplification.