2N5415 high-voltage PNP silicon bipolar junction transistor (NOS GOLD LEADS)

The 2N5415 is a high-voltage PNP silicon bipolar junction transistor tailored for high-voltage switching and linear amplification tasks. It supports up to 200 V across collector-emitter and collector-base junctions, with continuous collector current capacity of -1.0 A. Housed in a hermetic TO-39 metal package, it offers reliable power dissipation of 10 W at 25 °C. Its transition frequency of 15 MHz and DC current gain ranging from 30 to 150 make it well-suited for use in industrial and consumer line-operated circuits such as inverters and switching regulators requiring stable performance under high-voltage, low-current conditions.