2N5005 rugged, high-power PNP bipolar junction transistor (NOS)

The 2N5005 is a rugged, high-power PNP bipolar junction transistor designed for demanding military and aerospace environments. Featuring a maximum continuous collector current of 5 A and a collector-emitter voltage rating of 80 V, it supports power dissipation up to 58 W at 25°C. With a DC current gain ranging from 70 to 200 at 2.5 A and 5 V, the 2N5005 ensures reliable amplification and switching. Encased in a hermetically sealed TO-59 metal can, it offers exceptional durability and long-term stability under harsh conditions. This transistor meets stringent military standards such as MIL-PRF-19500/535, making it ideal for critical high-speed, high-reliability applications.