2N4250 PNP silicon bipolar junction transistor (NOS GOLD LEADS)

The 2N4250 is a PNP silicon bipolar junction transistor designed for precision low-level, low-noise amplification. It features a collector-emitter breakdown voltage of -40V and supports a maximum collector current of -100mA, with a power dissipation rating of 200mW. Available in plastic TO-106 and TO-92 packages, this transistor is well-suited for applications requiring stable, low-noise signal amplification in sensitive electronic circuits.