2N2484 NPN silicon transistor

The  engineered for precision in low-noise amplifier circuits. It supports a maximum collector-emitter voltage of 60V and can handle collector currents up to 50mA, with a power dissipation rating of 360mW. Its low current requirements and high accuracy make it ideal for use in preamplifiers, oscillators, and current mirror configurations. Typically housed in a TO-18 metal can package, this transistor delivers reliable performance in demanding analog applications.