2N1724 NPN silicon high-power bipolar junction transistor (BJT). (MIL/SPEC - NOS - god leads))

This unused MIL/SPEC component features a durable gold-plated case designed for reliable performance and corrosion resistance. Crafted to meet military specifications, it offers long-term stability and protection in demanding environments, making it ideal for precision electronics applications requiring both durability and consistent conductivity.

Here are the key specifications for the 2N1724:

• Transistor Type: NPN

• Collector Current ($I\_C$): 5 A (maximum continuous)

• Collector-Emitter Voltage ($V\_CEO$): 80 V (maximum)

• Collector-Base Voltage ($V\_CBO$): 175 V (maximum)

• Power Dissipation ($P\_D$): 117 W (absolute maximum), though some sources list it as 3 W, which is likely a more common or practical dissipation rating.

• DC Current Gain (hFE): 20 (minimum) at an $I\_C$ of 2.0 A and a $V\_CE$ of 15 V

• Package: TO-61 (also referred to as TO-211MA, TO-210AC), a stud-mount, hermetically sealed metal can package.